Low frequency noise and quantum transport in 0.1 mu m n-MOSFETs

Abstract

Random telegraph signals (RTS) produced in deep-submicron n-MOSFETs by single electron capture and emission on oxide traps ar studied. Trap parameters, energy level, spatial location, and activation energies are derived. For temperatures lower than 20 K, the static transistor characteristics show evidence of resonant tunneling and variable range hopping mediated by localized states in the channel. When resonant tunneling dominates the transport, no RTS is measurable and a new type of low frequency current fluctuations is observed.<>