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BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370μA/μm, SS = 73mV/dec and Ion /Ioff Ratio > 4×109

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/vlsitechnology18217.2020.9265064
W. Chakraborty, B. Grisafe, H. Ye, I. Lightcap, Kaiwen Ni, S. Datta
{"title":"BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370μA/μm, SS = 73mV/dec and Ion /Ioff Ratio > 4×109","authors":"W. Chakraborty, B. Grisafe, H. Ye, I. Lightcap, Kaiwen Ni, S. Datta","doi":"10.1109/vlsitechnology18217.2020.9265064","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"51 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnology18217.2020.9265064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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BEOL兼容双栅超薄体掺w氧化铟晶体管，离子= 370μA/μm, SS = 73mV/dec，离子/开关比> 4×109
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2020 IEEE Symposium on VLSI Technology
2020 IEEE Symposium on VLSI Technology
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