NEGF simulations of stacked silicon nanosheet FETs for performance optimization

Abstract

We present quantum transport simulation results of stacked silicon nanosheet (SiNS) nFETs. Our simulations are based on the non-equilibrium Green’s function (NEGF) method which is capable of dealing with all major physical effects necessary for steady-state electron transport in the complex-shaped devices. In order to help find optimal device design many split simulations for various geometry and process conditions were performed as a demonstration.