Modeling Silicon CMOS devices for quantum computing

B. Venitucci, Jing Li, L. Bourdet, Y. Niquet
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引用次数: 3

Abstract

We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.
用于量子计算的硅CMOS器件建模
我们回顾了硅自旋量子比特建模的最新成果。我们特别描述了我们为模拟这些器件而建立的方法,并给出了一些关于绝缘体上硅(SOI)量子比特的说明。我们特别讨论了电子和空穴自旋的电操纵。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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