Aluminide intermetallics for advanced interconnect metallization: thin film studies

J. Soulie, Z. Tokei, J. Swerts, C. Adelmann
{"title":"Aluminide intermetallics for advanced interconnect metallization: thin film studies","authors":"J. Soulie, Z. Tokei, J. Swerts, C. Adelmann","doi":"10.1109/IITC51362.2021.9537441","DOIUrl":null,"url":null,"abstract":"AlNi, Al3Sc, AlCu, and Al2Cu thin films have been investigated as potential alternatives for Cu in interconnect metallization schemes. Stoichiometric NiAl thin films of 56 nm thickness show a resistivity of 13.9 μΩ cm after post-deposition annealing at 600°C. Different capping layers were tested to overcome the formation of an oxide top layer. Al3Sc presents a resistivity of 12.5 μΩ cm after post-deposition annealing at 500°C (for 24 nm thick films). AlCu and Al2Cu outperform Ru films at 20 nm thickness and above (9.5 μΩ cm for 28 nm films). Challenges and integration feasibility are discussed.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

AlNi, Al3Sc, AlCu, and Al2Cu thin films have been investigated as potential alternatives for Cu in interconnect metallization schemes. Stoichiometric NiAl thin films of 56 nm thickness show a resistivity of 13.9 μΩ cm after post-deposition annealing at 600°C. Different capping layers were tested to overcome the formation of an oxide top layer. Al3Sc presents a resistivity of 12.5 μΩ cm after post-deposition annealing at 500°C (for 24 nm thick films). AlCu and Al2Cu outperform Ru films at 20 nm thickness and above (9.5 μΩ cm for 28 nm films). Challenges and integration feasibility are discussed.
用于高级互连金属化的铝化物金属间化合物:薄膜研究
AlNi, Al3Sc, AlCu和Al2Cu薄膜已被研究作为互连金属化方案中Cu的潜在替代品。56 nm厚度的NiAl薄膜经600℃沉积后退火后,其电阻率为13.9 μΩ cm。测试了不同的封井层,以克服氧化物顶层的形成。沉积后退火500℃(24 nm厚薄膜)后,Al3Sc的电阻率为12.5 μΩ cm。AlCu和Al2Cu薄膜在20nm及以上的厚度上优于Ru薄膜(28nm薄膜为9.5 μΩ cm)。讨论了挑战和集成的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信