Space quantization effects in double gate SB-MOSFETs: Role of the active layer thickness

Abstract

In this paper a particle-based Monte Carlo research of the static performance of double gate Schottky barrier MOSFETs is presented. As the devices simulated have extremely reduced sizes, space quantization phenomena appear within the channel. For describing this effect the effective potential approach is considered. Several static quantities are studied in order to characterize the effects of the inclusion of a second gate in this kind of devices. Besides, the consequences of a drastic reduction of the devices' active layer thickness are also experimented. Results demonstrate that disregarding quantum phenomena leads to a distortion of the electron density profiles and to an overestimation of the current which flows within the devices. The inclusion of a second gate in these devices provokes the growth of the drain current. However, the decrease of the active layer thickness attenuates the drive currents, even though, the tunnel injection current, comparatively, grows.