Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator

T. Ikegami, K. Fukuda, J. Hattori
{"title":"Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator","authors":"T. Ikegami, K. Fukuda, J. Hattori","doi":"10.1109/SISPAD.2019.8870377","DOIUrl":null,"url":null,"abstract":"A Python-based device simulator named Impulse TCAD was developed. The simulator is built on top of a nonlinear finite volume method (FVM) solver. To describe physical behavior of non-standard materials, both device properties and their dominant equations can be customized. The given FVM equations are solved by the Newton method, where required derivatives of the equations are derived automatically by using an automatic differentiation technique. As a demonstration, a steady state analysis of the negative capacitance field effect transistors with ferroelectric materials is selected, where the coupled Poisson and Devonshire equations are implemented in several different ways.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A Python-based device simulator named Impulse TCAD was developed. The simulator is built on top of a nonlinear finite volume method (FVM) solver. To describe physical behavior of non-standard materials, both device properties and their dominant equations can be customized. The given FVM equations are solved by the Newton method, where required derivatives of the equations are derived automatically by using an automatic differentiation technique. As a demonstration, a steady state analysis of the negative capacitance field effect transistors with ferroelectric materials is selected, where the coupled Poisson and Devonshire equations are implemented in several different ways.
基于python的半导体器件模拟器的自动微分实现
开发了一个基于python的设备模拟器Impulse TCAD。该仿真器建立在非线性有限体积法(FVM)求解器的基础上。为了描述非标准材料的物理行为,器件性质和它们的主导方程都可以定制。用牛顿法求解给定的FVM方程,其中利用自动微分技术自动求出方程的所需导数。为了证明这一点,选择了铁电材料负电容场效应晶体管的稳态分析,其中耦合泊松和德文夏方程以几种不同的方式实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信