Enabling Ferroelectric Memories in BEoL - towards advanced neuromorphic computing architectures

D. Lehninger, M. Lederer, T. Ali, T. Kämpfe, K. Mertens, K. Seidel
{"title":"Enabling Ferroelectric Memories in BEoL - towards advanced neuromorphic computing architectures","authors":"D. Lehninger, M. Lederer, T. Ali, T. Kämpfe, K. Mertens, K. Seidel","doi":"10.1109/IITC51362.2021.9537346","DOIUrl":null,"url":null,"abstract":"Advanced non-volatile memory concepts such as the 1T1C ferroelectric (FE) random-access memory (FeRAM) and the 1T1C FE field-effect transistor (FeFET) can be realized by connecting a metal-ferroelectric-metal (MFM) capacitor placed in the back end of line (BEoL) of a microchip to the drain and gate contacts of a standard logic device, respectively. With the vertical distributed select devices in the front-end of line (FEoL) and the storage elements in the BEoL, both concepts increase the effective memory density of a microchip without introducing major changes in the FEoL fabrication technology. However, for advanced neuromorphic computing architectures, the 1T1C FeFET is the device of choice, since it provides non-destructive readout. The most promising material for the integration of FE non-volatile memory functionalities into the BEoL is Zr doped HfO2 (HZO). It crystallizes at low temperatures in the orthorhombic phase (the one with FE properties) and with a polycrystalline structure. The latter is important to enable analogue like switching in synaptic devices. Herein, the above-mentioned memory concepts are introduced and key steps to optimize the HZO films for the BEoL integration and for the neuromorphic computing use case are described.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"70 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Advanced non-volatile memory concepts such as the 1T1C ferroelectric (FE) random-access memory (FeRAM) and the 1T1C FE field-effect transistor (FeFET) can be realized by connecting a metal-ferroelectric-metal (MFM) capacitor placed in the back end of line (BEoL) of a microchip to the drain and gate contacts of a standard logic device, respectively. With the vertical distributed select devices in the front-end of line (FEoL) and the storage elements in the BEoL, both concepts increase the effective memory density of a microchip without introducing major changes in the FEoL fabrication technology. However, for advanced neuromorphic computing architectures, the 1T1C FeFET is the device of choice, since it provides non-destructive readout. The most promising material for the integration of FE non-volatile memory functionalities into the BEoL is Zr doped HfO2 (HZO). It crystallizes at low temperatures in the orthorhombic phase (the one with FE properties) and with a polycrystalline structure. The latter is important to enable analogue like switching in synaptic devices. Herein, the above-mentioned memory concepts are introduced and key steps to optimize the HZO films for the BEoL integration and for the neuromorphic computing use case are described.
在BEoL中实现铁电存储器——迈向先进的神经形态计算架构
先进的非易失性存储器概念,如1T1C铁电(FE)随机存取存储器(FeRAM)和1T1C铁电场效应晶体管(FeFET),可以通过将放置在微芯片线后端(BEoL)的金属-铁电-金属(MFM)电容器分别连接到标准逻辑器件的漏极和栅极触点来实现。利用线前端(FEoL)的垂直分布选择器件和BEoL中的存储元件,这两个概念都增加了微芯片的有效存储密度,而不会对FEoL制造技术产生重大变化。然而,对于先进的神经形态计算架构,1T1C场效应管是首选器件,因为它提供非破坏性读出。将FE非易失性存储功能集成到BEoL中最有前途的材料是Zr掺杂的HfO2 (HZO)。它在低温下结晶为正交相(具有FE性质的一种),并具有多晶结构。后者对于在突触装置中实现模拟开关很重要。本文介绍了上述存储概念,并描述了针对BEoL集成和神经形态计算用例优化HZO薄膜的关键步骤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信