Enabling Ferroelectric Memories in BEoL - towards advanced neuromorphic computing architectures

D. Lehninger, M. Lederer, T. Ali, T. Kämpfe, K. Mertens, K. Seidel
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引用次数: 5

Abstract

Advanced non-volatile memory concepts such as the 1T1C ferroelectric (FE) random-access memory (FeRAM) and the 1T1C FE field-effect transistor (FeFET) can be realized by connecting a metal-ferroelectric-metal (MFM) capacitor placed in the back end of line (BEoL) of a microchip to the drain and gate contacts of a standard logic device, respectively. With the vertical distributed select devices in the front-end of line (FEoL) and the storage elements in the BEoL, both concepts increase the effective memory density of a microchip without introducing major changes in the FEoL fabrication technology. However, for advanced neuromorphic computing architectures, the 1T1C FeFET is the device of choice, since it provides non-destructive readout. The most promising material for the integration of FE non-volatile memory functionalities into the BEoL is Zr doped HfO2 (HZO). It crystallizes at low temperatures in the orthorhombic phase (the one with FE properties) and with a polycrystalline structure. The latter is important to enable analogue like switching in synaptic devices. Herein, the above-mentioned memory concepts are introduced and key steps to optimize the HZO films for the BEoL integration and for the neuromorphic computing use case are described.
在BEoL中实现铁电存储器——迈向先进的神经形态计算架构
先进的非易失性存储器概念,如1T1C铁电(FE)随机存取存储器(FeRAM)和1T1C铁电场效应晶体管(FeFET),可以通过将放置在微芯片线后端(BEoL)的金属-铁电-金属(MFM)电容器分别连接到标准逻辑器件的漏极和栅极触点来实现。利用线前端(FEoL)的垂直分布选择器件和BEoL中的存储元件,这两个概念都增加了微芯片的有效存储密度,而不会对FEoL制造技术产生重大变化。然而,对于先进的神经形态计算架构,1T1C场效应管是首选器件,因为它提供非破坏性读出。将FE非易失性存储功能集成到BEoL中最有前途的材料是Zr掺杂的HfO2 (HZO)。它在低温下结晶为正交相(具有FE性质的一种),并具有多晶结构。后者对于在突触装置中实现模拟开关很重要。本文介绍了上述存储概念,并描述了针对BEoL集成和神经形态计算用例优化HZO薄膜的关键步骤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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