Floating-body effect free concave SOI-MOSFETs (COSMOS)

Abstract

In order to overcome the degradation induced by floating body effects and to suppress the increase in parasitic source/drain resistances in thin-film silicon-on-insulator (SOI) MOSFETs, a concave SOI-MOSFET (COSMOS) is proposed. This structure realizes a partially thin-film SOI region, which is used as a fully depleted channel, and thick-film SOI regions, which are used as source/drain. The unique features of the COSMOS are found to be (1) elimination of the floating-body effects, (2) less short channel effect, (3) excellent subthreshold characteristics, and (4) reduction in parasitic source/drain resistances.<>