Power-side-channel analysis of carbon nanotube FET based design

Chandra K. H. Suresh, Bodhisatwa Mazumdar, Subidh Ali, O. Sinanoglu
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引用次数: 2

Abstract

Continuous scaling of CMOS technology beyond sub-nanometer region has aggravated short-channel effects, resulting in increased leakage current and high power densities. Furthermore, elevated leakage current and power density render CMOS based security-critical applications vulnerable to power-side-channel attacks. Carbon Nanotubes (CNT) is a promising alternative to CMOS technology. It offers superior transport properties, excellent thermal conductivities, high current capacities, and low power densities. Besides area, power and performance, adherence to hardware security aspects have become an important criteria today. In this work, we present the first study on power-side-channel analysis of ciphers implemented using CNTFETs. Our simulation results show that for 130 power traces, the simple power analysis (SPA) attack success rate is less than 0.35 for CNTFET based ciphers, whereas it is greater than 0.95 for CMOS based ciphers. For correlation power analysis, the difference of correlation coefficient of the correct key and closest wrong key guess is 1.3 for CMOS based design, and less than 0.56 for CNTFET based ciphers for 20,000 power traces, which implies lesser distinguishability of correct key in case of CNTFETs. These results indicate that CNT offers a higher resilience to power-side-channel attacks than CMOS.
基于功率侧通道分析的碳纳米管场效应管设计
CMOS技术在亚纳米区域以外的持续缩放加剧了短通道效应,导致泄漏电流增加和功率密度高。此外,高泄漏电流和功率密度使得基于CMOS的安全关键应用容易受到功率侧通道攻击。碳纳米管(CNT)是一种很有前途的CMOS技术替代品。它具有优越的传输性能,优异的导热性,高电流容量和低功率密度。除了面积、功率和性能之外,遵守硬件安全方面已成为当今的重要标准。在这项工作中,我们首次研究了使用cntfet实现的密码的功率侧信道分析。仿真结果表明,对于130个功率走线,基于CNTFET的密码的简单功率分析(SPA)攻击成功率小于0.35,而基于CMOS的密码的简单功率分析(SPA)攻击成功率大于0.95。在相关功率分析中,基于CMOS设计的正确密钥与最接近的错误密钥的相关系数之差为1.3,而基于CNTFET的2万个功率走线密码的相关系数之差小于0.56,这意味着在CNTFET的情况下正确密钥的可分辨性较低。这些结果表明,碳纳米管比CMOS具有更高的抗功率侧信道攻击能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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