A SOI-BiCMOS RF-transmitter for personal digital cellular communication (PDC)

S. Kishore, Glenn Chang, C. Hull
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引用次数: 5

Abstract

We present a 1-GHz RF-transmitter IC for Personal Digital Cellular Communications (PDC) application in Japan. This IC is mounted in a standard TQFP 32-pin package and it represents the first reported SOI-BiCMOS implementation for cellular usage. The IC utilizes a linear, fully-complex mixing of a UHF signal (650 MHz-750 MHz) and a fixed VHF signal (175 MHz or 250 MHz) to generate spurious-free, I-Q LO (850 MHz-1 GHz). The generated LO carrier is mixed with the /spl pi//4 DQPSK modulated baseband PDC signal in an I/Q upconverter/modulator. The I/Q upconversion signal path includes an upconversion I/Q modulator, a 2-stage linear 40 dB-AGC control circuit, an on-chip balun, and a +1 dBm output driver with on-chip double termination to 50 ohms. The transmitter has better than 50 dB LO-leakage suppression, sideband-rejection of 40 dB, and less than 65 dBc of spurious leakage at the output. The output noise floor is better than -139 dBc/Hz at 10 MHz offset from the carrier in full power mode. The IC dissipates 32 mA of maximum current from a 2.7 V supply.
用于个人数字蜂窝通信(PDC)的SOI-BiCMOS射频发射机
我们提出了一种用于日本个人数字蜂窝通信(PDC)应用的1ghz射频发射机IC。该IC安装在标准的TQFP 32引脚封装中,它代表了第一个报道的用于蜂窝使用的SOI-BiCMOS实现。该IC利用UHF信号(650 MHz-750 MHz)和固定VHF信号(175 MHz或250 MHz)的线性、完全复杂的混合来产生无杂散的I-Q LO (850 MHz-1 GHz)。生成的LO载波与/spl pi//4 DQPSK调制基带PDC信号混合在I/Q上变频器/调制器中。I/Q上转换信号路径包括上转换I/Q调制器,2级线性40 dB-AGC控制电路,片上平衡器和片上双端到50欧姆的+1 dBm输出驱动器。该发射机具有50 dB以上的低电压泄漏抑制,40 dB的边带抑制和小于65 dBc的输出杂散泄漏。在全功率模式下,在与载波偏移10 MHz时,输出本底噪声优于-139 dBc/Hz。集成电路耗散32ma的最大电流从2.7 V电源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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