Tailored parallel micro-channel cooling for hot spot mitigation

S. Solovitz, M. Lewis
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引用次数: 2

Abstract

Modern electronics feature high surface heat fluxes, particularly at localized hot spots, which can be detrimental to chip performance. While techniques have been developed to alleviate these local effects, they are typically advanced solutions using embedded cooling devices. Instead, an effective, less aggressive solution involves the adaptation of traditional micro-channel cooling to the particular thermal profile. An analytical method is developed to determine individual channel flow rates and convective heat transfer through traditional correlations. This results in a simple power law relating passage diameter, D, to hot spot power, q, where D ~ qm. Unfortunately, this method is limited by the form of the empirical correlations, being applicable to only certain ranges of Reynolds numbers and channel sizes. To address this issue, a series of computational simulations has been conducted to select the appropriate power law for typical flow conditions in a micro-channel heat sink. For laminar, developing flow at ReD ~ 100, an empirical fit was generated. At an arbitrary, non-uniform chip power dissipation, the device temperature rises balanced to within less than 5%, even with up to three times more power at local spots.
量身定制的平行微通道冷却,以缓解热点
现代电子产品具有高表面热通量,特别是在局部热点处,这可能对芯片性能有害。虽然已经开发出了缓解这些局部影响的技术,但它们通常是使用嵌入式冷却设备的先进解决方案。相反,一种有效的、不那么激进的解决方案是采用传统的微通道冷却来适应特定的热剖面。本文提出了一种利用传统关联法确定单个通道流速和对流换热的解析方法。这就得到了一个简单的关于通道直径D与热点功率q的幂律,其中D ~ qm。不幸的是,这种方法受到经验相关形式的限制,仅适用于一定范围的雷诺数和通道尺寸。为了解决这一问题,进行了一系列的计算模拟,以选择适合微通道散热器典型流动条件的幂律。对于在ReD ~ 100的层流,产生了经验拟合。在任意的、不均匀的芯片功耗下,即使局部点的功率增加了三倍,器件温度也会平衡上升到不到5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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