Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics

Abstract

By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO2), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO2/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.