Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?

Abstract

To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.