A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA

E. Sacchi, I. Bietti, F. Gatta, F. Svelto, R. Castello
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引用次数: 31

Abstract

A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor.
一个2db NF,全差分,可变增益,900mhz CMOS LNA
采用nMOS和pMOS电感退化对作为输入级,并联配置的全差分900 MHz CMOS LNA可实现以下性能:2 dB NF, 22 dB电压增益,-3 dBm IIP3, 8ma电流消耗。这个LNA的附加特性是可变增益。对封装的模具进行了测量。除了SMD电感器(用于调谐目的)外,不使用外部元件,与片上门螺旋电感器串联。
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