E. Douglas, B. Klein, A. Allerman, A. Baca, T. Fortune, A. Armstrong
{"title":"Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate","authors":"E. Douglas, B. Klein, A. Allerman, A. Baca, T. Fortune, A. Armstrong","doi":"10.1109/DRC.2018.8444130","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2018.8444130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}