High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain

B. Liu, X. Gong, G. Han, P. S. Lim, Y. Tong, Qian Zhou, Yue Yang, N. Daval, M. Pulido, D. Delprat, B. Nguyen, Y. Yeo
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引用次数: 2

Abstract

We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si2H6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current ION of ~494 μA/μm at VGS - VTH = -1 V and VDS = -1 V. A high ION/IOFF ratio of more than 3×104 and a high peak saturation transconductance GMSatMax of ~540 μS/μm were achieved.
高性能Ω-gate Ge FinFET具有低温Si2H6钝化和无植入肖特基势垒nge金属源/漏
我们报道了第一个Ω-gate锗(Ge) p沟道FinFET,具有低温Si2H6钝化和无植入肖特基势垒锗镍(NiGe)金属源/漏,使用低于400°C的工艺模块在高质量的GeOI衬底上形成。与已有报道的采用自顶向下方法形成Ge通道的多栅极(MuG) Ge器件相比,在VGS - VTH = -1 V和VDS = -1 V下,本研究的Ge finfet具有高达~494 μA/μm的高导通电流。离子/离合比达到3×104以上,峰值饱和跨导GMSatMax达到~540 μS/μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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