Effect of surface finish (OSP and ENEPIG) on failure mechanism induced by electromigration in Sn-3.0Ag-0.5Cu flip chip solder interconnect

Mingliang L. Huang, Leida Chen, Shaoming Zhou, S. Ye
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引用次数: 4

Abstract

The different effects of OSP and ENEPIG surface finishes on the electromigration-induced failure mechanism of Sn-3.0Ag-0.5Cu flip chip solder joint were investigated at 150°C under a current density of 1×104 A/cm2. In as-soldered state, the interfacial (Cu0.55Ni0.45)6Sn5 IMC formed on Ni UBM at the chip side in both OSP and ENEPIG joints. However, the EM resistance of the two joints was greatly different when electrons flowed from chip to PCB though they had the same composition of interfacial (Cu, Ni)6Sn5 and the same Ni UBM. For OSP joint, the interfacial (Cu, Ni)6Sn5 and the Ni UBM displayed an excellent EM resistance; and the Cu content of interfacial (Cu, Ni)6Sn5 IMC at the chip side was slightly higher than that of as-reflowed joint. While for ENEPIG joint, the interfacial (Cu, Ni)6Sn5 IMC and Ni UBM were seriously consumed during EM, and the joint failed. The obvious difference of EM-induced failure between the OSP joint and the ENEPIG joint was due to the different effects of surface finishes. Compared with the ENEPIG joint, the OSP joint could offer a Cu source to improve the stability of interfacial (Cu, Ni)6Sn5 IMC, which effectively inhibited the dissolution of Ni during EM.
表面粗糙度(OSP和ENEPIG)对Sn-3.0Ag-0.5Cu倒装焊料互连电迁移失效机制的影响
在150℃下,在1×104 a /cm2电流密度下,研究了OSP和ENEPIG表面处理对Sn-3.0Ag-0.5Cu倒装焊点电迁移失效机制的影响。在焊接状态下,OSP和ENEPIG接头均在芯片侧Ni UBM上形成(Cu0.55Ni0.45)6Sn5 IMC界面。然而,当电子从芯片流向PCB时,虽然两者的界面成分(Cu, Ni)6Sn5和Ni UBM相同,但两者的电磁电阻却有很大差异。对于OSP接头,(Cu, Ni)6Sn5与Ni UBM的界面表现出优异的抗电磁性能;切屑侧界面(Cu, Ni)6Sn5 IMC的Cu含量略高于再流接头。而对于ENEPIG接头,emm过程中界面(Cu, Ni)6Sn5 IMC和Ni UBM消耗严重,导致接头失效。OSP接头与ENEPIG接头在电磁诱发失效方面的显著差异是由于表面处理效果的不同。与ENEPIG接头相比,OSP接头可以提供Cu源,提高(Cu, Ni)6Sn5 IMC界面的稳定性,有效抑制了Ni在EM过程中的溶解。
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