K. Lee, K. Yamane, S. Noh, V. B. Naik, H. Yang, S. Jang, J. Kwon, B. Behin-Aein, R. Chao, J. H. Lim, K. S., K. W. Gan, D. Zeng, N. Thiyagarajah, L. C. Goh, B. Liu, E. Toh, B. Jung, T. L. Wee, T. Ling, T. Chan, N. Chung, J. W. Ting, S. Lakshmipathi, J. Son, J. Hwang, L. Zhang, R. Low, R. Krishnan, T. Kitamura, Y. You, C. Seet, H. Cong, D. Shum, J. Wong, S. Woo, J. Lam, E. Quek, A. See, S. Siah
{"title":"22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity","authors":"K. Lee, K. Yamane, S. Noh, V. B. Naik, H. Yang, S. Jang, J. Kwon, B. Behin-Aein, R. Chao, J. H. Lim, K. S., K. W. Gan, D. Zeng, N. Thiyagarajah, L. C. Goh, B. Liu, E. Toh, B. Jung, T. L. Wee, T. Ling, T. Chan, N. Chung, J. W. Ting, S. Lakshmipathi, J. Son, J. Hwang, L. Zhang, R. Low, R. Krishnan, T. Kitamura, Y. You, C. Seet, H. Cong, D. Shum, J. Wong, S. Woo, J. Lam, E. Quek, A. See, S. Siah","doi":"10.1109/VLSIT.2018.8510655","DOIUrl":null,"url":null,"abstract":"We demonstrate a fully functional embedded MRAM (eMRAM) macro integrated into a 22-nm FD-SOI CMOS platform. This macro combined with eFlash-flavor MTJ film stacks shows median-die bit error rate (BER) < 1 ppm after 5× solder reflows. It also meets the automotive grade-1 data retention requirement and shows intrinsic stand-by magnetic immunity of 1.4 kOe (BER criteria = 1 ppm) after 1-hr exposure at 25 °C. The results reveal that eMRAM is capable of serving a broad spectrum of eFlash applications at 22 nm or beyond.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"236 1","pages":"183-184"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
We demonstrate a fully functional embedded MRAM (eMRAM) macro integrated into a 22-nm FD-SOI CMOS platform. This macro combined with eFlash-flavor MTJ film stacks shows median-die bit error rate (BER) < 1 ppm after 5× solder reflows. It also meets the automotive grade-1 data retention requirement and shows intrinsic stand-by magnetic immunity of 1.4 kOe (BER criteria = 1 ppm) after 1-hr exposure at 25 °C. The results reveal that eMRAM is capable of serving a broad spectrum of eFlash applications at 22 nm or beyond.
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