S. Samavedam, L. La, J. Smith, S. Dakshina-Murthy, E. Luckowski, J. Schaeffer, M. Zavala, R. Martin, V. Dhandapani, D. Triyoso, H. Tseng, P. Tobin, D. Gilmer, C. Hobbs, W. Taylor, J. Grant, R. Hegde, J. Mogab, C. Thomas, P. Abramowitz, M. Moosa, J. Conner, J. Jiang, V. Arunachalarn, M. Sadd, B. Nguyen, B. White
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引用次数: 47
Abstract
We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).
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