7nm Chip-Package Interaction Study on a Fine Pitch Flip Chip Package with Laser Assisted Bonding and Mass Reflow Technology

I. Hsu, Chi-Yuan Chen, Stanley Lin, Ta-Jen Yu, NamJu Cho, M. Hsieh
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引用次数: 3

Abstract

With the fast growth in emerging technologies for mobile applications, packaging solutions are being driven by advanced Silicon (Si) nodes technology (down to 7nm), smaller form factor package designs, efficiency enhancement and lower power consumption. The flip chip chip scale package (fcCSP) has been widely adopted as the solution for mobile devices to satisfy these challenging requirements. In order to create a lower cost solution, the fcCSP uses the cost-effective combination of copper (Cu) pillar bumps, embedded trace substrate (ETS) technology, mass reflow (MR) chip attach and molded underfill (MUF) processes. Although the utilization of MR chip attach is a cost-effective process for flip chip package assembly, there is a high risk for a bump to trace short, especially for the designs with finer bump pitch and line width / line spacing (LW/LS) with an escaped trace. To reduce this risk, the laser assisted bonding (LAB) methodology is introduced to study the 7nm chip-package interaction (CPI) of an fcCSP with a 60µm bump pitch and escaped traces design in this paper. For the purpose of measuring the extremely low-k (ELK) performance in a 14x14mm fine pitch fcCSP with 7nm live die, the thunder test (two-times MR and quick temperature cycling (QTC) tests) as well as the hammer test with multi-reflow process (peak temperature at 260ºC) have been evaluated after performing LAB and MR chip attach methodologies. The results show that although both chip attach methodologies can pass the normal requirements of the thunder and hammer tests, the utilization of LAB technology can further enhance the strength of ELK and produce better yield performance. From these results, it is believed that LAB not only can guarantee assembly yield with less ELK damage risk in the examined 7nm fcCSP, but can also accommodate Si node and bump pitch reduction with a finer LW/LS substrate with escaped traces design.
基于激光辅助键合和质量回流技术的7nm小间距倒装芯片封装相互作用研究
随着移动应用新兴技术的快速发展,封装解决方案正受到先进的硅(Si)节点技术(低至7nm)、更小尺寸封装设计、效率提高和更低功耗的推动。倒装芯片芯片规模封装(fcCSP)已被广泛采用作为移动设备的解决方案,以满足这些具有挑战性的要求。为了创造更低成本的解决方案,fcCSP采用了铜(Cu)柱凸点、嵌入式痕量衬底(ETS)技术、质量回流(MR)芯片连接和模制下填充(MUF)工艺的经济高效组合。虽然利用MR芯片贴装是倒装芯片封装组装的一种经济高效的工艺,但凸点走线短的风险很高,特别是对于具有更细凸点间距和线宽/线间距(LW/LS)的设计,并且有逃过的走线。为了降低这种风险,本文引入激光辅助键合(LAB)方法来研究具有60µm凹凸间距和逃逸迹设计的fcCSP的7nm芯片封装相互作用(CPI)。为了测量具有7nm活模的14x14mm细间距fcCSP的极低k (ELK)性能,在执行LAB和MR芯片连接方法后,对雷电测试(两次MR和快速温度循环(QTC)测试)以及具有多回流工艺的锤击测试(峰值温度为260ºC)进行了评估。结果表明,虽然两种贴片方法都能通过雷电和锤击试验的正常要求,但利用LAB技术可以进一步提高ELK的强度,产生更好的良率性能。从这些结果来看,我们认为LAB不仅可以保证7nm fcCSP的组装良率,同时降低ELK损伤风险,而且还可以通过更细的LW/LS衬底和逃逸走线设计来减少Si节点和凹凸节距。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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