Evaluation of Mechanical Stress Induced During IC Packaging

V. Cherman, M. Lofrano, Mario Gonzalez, F. Cadacio, K. Rebibis, E. Beyne, A. Takano, M. Higashi
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引用次数: 10

Abstract

In this work the focus is on thermo-mechanical aspects of Chip Package Interaction (CPI) in flip-chip Chip Scale packages (fcCSP) packages. To minimize mechanical stress induced during flip-chip process, the laminate substrate with very low coefficient of thermal expansion (CTE) of the core material (?5 ppm/°C) is used. Mechanical stress induced in Si chip after every main assembly step is measured using the proprietary chip with integrated stress sensors and is simulated using calibrated finite element models. In particular, two flip-chip processes, i.e. Mass Reflow (MR) and Thermo-Compression Bonding (TCB) are benchmarked. The effect of application of capillary underfill (CUF) on mechanical stress is separately studied and shown to be not significant. The CPI effect of low-CTE substrate on mechanical stress is benchmarked with that induced by the substrate with conventional thermo-mechanical properties. The benefits of lowering core' CTE in terms of stress are clearly demonstrated. This is also confirmed by finite element modeling which reveals that stress induced in Si after flip-chip die attach process is very sensitive to the effective CTE of the substrate.
集成电路封装过程中机械应力的评价
在这项工作的重点是热机械方面的芯片封装相互作用(CPI)在倒装芯片芯片规模封装(fcCSP)封装。为了最大限度地减少倒装过程中引起的机械应力,采用极低热膨胀系数(CTE)的芯材(?5 ppm/°C)。采用集成应力传感器的专有芯片测量硅芯片在每个主要组装步骤后产生的机械应力,并使用校准的有限元模型进行模拟。特别是,两个倒装芯片工艺,即质量回流(MR)和热压缩键合(TCB)是基准。另外研究了毛细底填土对机械应力的影响,结果表明毛细底填土对机械应力的影响不显著。将低cte基板的CPI对机械应力的影响与具有常规热机械性能的基板的CPI对机械应力的影响作为基准。降低核心CTE在压力方面的好处得到了清楚的证明。有限元模型也证实了这一点,表明倒装晶片贴装过程后Si中产生的应力对衬底的有效CTE非常敏感。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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