High-level Synthesis for Low-power Design

Q4 Engineering
Zhiru Zhang, Deming Chen, Steve Dai, K. Campbell
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引用次数: 22

Abstract

Power and energy efficiency have emerged as first-order design constraints across the computing spectrum from handheld devices to warehouse-sized datacenters. As the number of transistors continues to scale, effectively managing design complexity under stringent power constraints has become an imminent challenge of the IC industry. The manual process of power optimization in RTL design has been increasingly difficult, if not already unsustainable. Complexity scaling dictates that this process must be automated with robust analysis and synthesis algorithms at a higher level of abstraction. Along this line, high-level synthesis (HLS) is a promising technology to improve design productivity and enable new opportunities for power optimization for higher design quality. By allowing early access to the system architecture, high-level decisions during HLS can have a significant impact on the power and energy efficiency of the synthesized design. In this paper, we will discuss the recent research development of using HLS to effectively explore a multi-dimensional design space and derive low-power implementations. We provide an in-depth coverage of HLS low-power optimization techniques and synthesis algorithms proposed in the last decade. We will also describe the key power optimization challenges facing HLS today and outline potential opportunities in tackling these challenges.
低功耗设计的高水平综合
从手持设备到仓库大小的数据中心,功率和能源效率已经成为整个计算领域的一级设计约束。随着晶体管数量的不断扩大,在严格的功率限制下有效地管理设计复杂性已成为集成电路行业迫在眉睫的挑战。RTL设计中功率优化的手动过程已经变得越来越困难,如果不是已经不可持续的话。复杂性缩放决定了这个过程必须在更高的抽象层次上使用健壮的分析和合成算法来自动化。沿着这条路线,高级综合(HLS)是一种很有前途的技术,可以提高设计生产力,并为更高设计质量的功率优化提供新的机会。通过允许早期访问系统架构,HLS期间的高级决策可以对综合设计的功率和能源效率产生重大影响。在本文中,我们将讨论使用HLS来有效探索多维设计空间并获得低功耗实现的最新研究进展。我们提供了近十年来提出的HLS低功耗优化技术和综合算法的深入报道。我们还将描述HLS目前面临的主要电源优化挑战,并概述解决这些挑战的潜在机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IPSJ Transactions on System LSI Design Methodology
IPSJ Transactions on System LSI Design Methodology Engineering-Electrical and Electronic Engineering
CiteScore
1.20
自引率
0.00%
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