Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications

E. Nako, K. Toprasertpong, R. Nakane, Z. Wang, Y. Miyatake, M. Takenaka, S. Takagi
{"title":"Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications","authors":"E. Nako, K. Toprasertpong, R. Nakane, Z. Wang, Y. Miyatake, M. Takenaka, S. Takagi","doi":"10.1109/VLSITechnology18217.2020.9265110","DOIUrl":null,"url":null,"abstract":"We propose a new AI calculation scheme by reservoir computing utilizing the memory effect and nonlinearity of ferroelectric gate MOSFETs (FeFETs) for neuromorphic applications. The task operations of time-series data are experimentally demonstrated by taking time responses of the drain current for gate voltage input as the virtual nodes. A high ability to classify input data is experimentally verified.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"397 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

We propose a new AI calculation scheme by reservoir computing utilizing the memory effect and nonlinearity of ferroelectric gate MOSFETs (FeFETs) for neuromorphic applications. The task operations of time-series data are experimentally demonstrated by taking time responses of the drain current for gate voltage input as the virtual nodes. A high ability to classify input data is experimentally verified.
神经形态应用Hf0.5Zr0.5O2/Si效应场效应油藏计算的提出与实验论证
我们提出了一种新的人工智能计算方案,利用铁电栅mosfet (fefet)的记忆效应和非线性,用于神经形态应用。以栅极电压输入漏极电流的时间响应为虚拟节点,实验验证了时序数据的任务运算。实验验证了对输入数据的高分类能力。
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