Radiation hard four-junction space solar cell based on GaInAsP alloys

2019 European Space Power Conference (ESPC) Pub Date : 2019-09-01 DOI:10.1109/ESPC.2019.8932035

D. Lackner, J. Schwar, F. Dimroth, J. Schön, R. Lang, B. Godejohann, F. Predan, M. Schachtner, B. Boizot, J. Lefèvre, C. Flötgen

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引用次数: 4

Abstract

Electric orbit raising increases the radiation dose for space solar arrays significantly. This leads to the need for a more radiation resistant, highly efficient space solar cell. We propose a new wafer-bonded 4-junction structure which allows reaching begin-of-life efficiencies up to 34.7% (AMO) and efficiencies up to 30.8% (AMO) after 1*1015 cm−2 1-MeV electron irradiation. The high radiation hardness is a result of specific material properties of InP-rich compounds which benefit from significant defect annealing under typical operating conditions in space. A new four-j unction space solar cell, based on high InP fractions containing GaInAsP and Ge is currently under development in the EU project RadHard and first devices achieve an efficiency of 21.4% (AM0) before irradiation. After irradiation, as expected, a strong annealing effect after 3 days at AM0 & 60°C is found for this device. Already at this early development stage 78% of the end of life open circuit target voltage of 3.09 V under AM0 has been reached.

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基于GaInAsP合金的辐射硬四结空间太阳能电池

电轨道升高会显著增加空间太阳能电池阵的辐射剂量。这就需要一种更耐辐射、更高效的太空太阳能电池。我们提出了一种新的晶圆键合4结结构，在1*1015 cm−2 1- mev电子辐照后，其寿命开始效率高达34.7% (AMO)，效率高达30.8% (AMO)。高辐射硬度是富inp化合物的特殊材料性能的结果，这得益于在典型的空间操作条件下的显著缺陷退火。欧盟RadHard项目目前正在开发一种基于含有GaInAsP和Ge的高InP组分的新型四结空间太阳能电池，第一批器件在辐照前的效率达到21.4% (AM0)。辐照后，正如预期的那样，该器件在AM0和60°C下经过3天的退火效果很强。在这个早期开发阶段，已经达到了AM0下3.09 V的寿命结束开路目标电压的78%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 European Space Power Conference (ESPC)

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