A novel silicon Geiger-mode avalanche photodiode

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175958

J. C. Jackson, A. Morrison, D. Phelan, A. Mathewson

引用次数: 35

Abstract

Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.

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一种新型硅盖革模式雪崩光电二极管

研究了CMOS兼容、单光子计数、盖革模式雪崩光电二极管(GM-APD)的暗计数非线性。设计、制造和表征了一种新的结构，以允许暗计数优化。所提出的结构的暗计数水平显示为与面积成线性比例。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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