R. Delhougne, A. Arreghini, E. Rosseel, A. Hikavyy, E. Vecchio, L. Zhang, M. Pak, L. Nyns, T. Raymaekers, N. Jossart, L. Breuil, S. S. V-Palayam, C. Tan, G. Van den bosch, A. Furnémont
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引用次数: 11
Abstract
We are demonstrating for the first time epi-based monocrystalline silicon macaroni channel 3-D NAND devices. The highly controllable channel replacement process sequence leads to > 95% yield, with excellent uniformity and reproducibility, proving its potential for manufacturability. The electron mobility of the channel is improved by a factor 30 compared to the polycrystalline macaroni Si channel, together with a reduction of the off state leakage. Furthermore, this channel replacement fabrication process does not affect memory performance and reliability. The performance benefits of this channel replacement technique make it a potential candidate for fabricating future 3-D NAND devices.
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