Epitaxial film growth by thermal laser evaporation

Dong Yeong Kim, J. Mannhart, W. Braun
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引用次数: 2

Abstract

We demonstrate the epitaxial growth of thin films by thermal laser evaporation. Epitaxial metal oxide films are grown by laser evaporating Ni, V, and Ru elemental sources in a variety of oxygen-ozone atmospheres on laser-heated oxide substrates. This results in NiO (111), VO2 (M1) (020), and RuO2 (110) epitaxial films on Al2O3 (0001) or MgO (100) substrates. The films show well-defined crystallographic orientation relationships with the substrates, as confirmed by in-plane and out-of-plane x-ray measurements. The results reveal the potential of thermal laser epitaxy for the epitaxial growth of ultrahigh-purity oxide heterostructures.
热激光蒸发生长外延膜
我们用热激光蒸发法证明了薄膜的外延生长。在激光加热的氧化物衬底上,通过激光蒸发Ni、V和Ru元素源,在不同的氧-臭氧气氛下生长外延金属氧化物薄膜。这导致在Al2O3(0001)或MgO(100)衬底上形成NiO (111), VO2 (M1)(020)和RuO2(110)外延薄膜。通过面内和面外x射线测量证实,薄膜与衬底具有明确的晶体取向关系。结果揭示了热激光外延在超高纯度氧化异质结构外延生长中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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