{"title":"Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure","authors":"S. Shin, M. Ryu, K. Kim","doi":"10.1109/SNW.2012.6243340","DOIUrl":null,"url":null,"abstract":"Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.