Photoassisted Field Emission from Gated Silicon Field Emitter Arrays

H. Shimawaki
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Abstract

Field emitter arrays (FEAs) have been investigated as potential cold cathodes in variety of applications such as ‰atpanel displays and image sensors, microwave and further high frequency vacuum electronic devices. The density modulated electron beam (a train of electron bunches) at high frequency generated directly from the cathodes oŠers opportunities for dramatic improvements in performance of microwave vacuum electronic devices. The paper discusses the emission characteristics and optical response of gated ptype silicon ˆeld emitter arrays under irradiation of laser pulses.
门控硅场发射极阵列的光辅助场发射
场发射极阵列(FEAs)作为潜在的冷阴极已被研究用于各种应用,如面板显示器和图像传感器,微波和其他高频真空电子设备。直接从阴极产生的高频密度调制电子束(一列电子束)oŠers为显著改善微波真空电子器件的性能提供了机会。本文讨论了门控p型硅场发射阵列在激光脉冲照射下的发射特性和光响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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