H. Hwang, E. J. Paek, J. H. Yang, C. Kang, B. H. Lee
{"title":"Characteristics of Metal/Ferroelectric (PVDF-TrFE)/Graphene (MFG) device","authors":"H. Hwang, E. J. Paek, J. H. Yang, C. Kang, B. H. Lee","doi":"10.1109/SNW.2012.6243335","DOIUrl":null,"url":null,"abstract":"Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.