Opportunities and challenges in ultra low k dielectrics for interconnect applications

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979561

S. Purushothaman, S. Nitta, J. G. Ryan, C. Narayan, M. Krishnan, S. Cohen, S. Gates, S. Whitehair, J. Hedrick, C. Tyberg, S. Greco, K. Rodbell, E. Huang, T. Dalton, R. Dellaguardia, K. Saenger, E. Simonyi, S.T. Chen, K. Malone, R. Miller, W. Volksen

引用次数: 1

Abstract

In this paper, we discuss the challenges associated with producing, characterizing and integrating porous dielectrics into back-end-of-line (BEOL) interconnects and present results from our integration evaluations.

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超低介电介质互连应用的机遇和挑战

在本文中，我们讨论了与生产、表征和将多孔介质集成到后端线(BEOL)互连中相关的挑战，并介绍了我们的集成评估结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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