EM performance improvements for Cu interconnects with Ru-based liner and Co cap in advanced nodes : (Invited)

K. Motoyama
{"title":"EM performance improvements for Cu interconnects with Ru-based liner and Co cap in advanced nodes : (Invited)","authors":"K. Motoyama","doi":"10.1109/IITC51362.2021.9537451","DOIUrl":null,"url":null,"abstract":"It has been observed that void-free Cu fill, interface control for both Cu/liner (trench sidewall and bottom) and Cu/cap (trench top), and grain size engineering are critical to improve Electromigration (EM) performance for Cu interconnects in the case of using Ru liner and Co cap. Especially, Co diffusion from the cap into a Ru liner (resulting in Co depletion at the top of Cu lines) is one of the root causes of EM degradation. A novel Co-doped Ru liner has been developed, which demonstrates a significant EM performance boost by addressing the Co diffusion issue. This Co-doped Ru liner is shown to be a promising liner of choice for Cu interconnects in advanced nodes.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

It has been observed that void-free Cu fill, interface control for both Cu/liner (trench sidewall and bottom) and Cu/cap (trench top), and grain size engineering are critical to improve Electromigration (EM) performance for Cu interconnects in the case of using Ru liner and Co cap. Especially, Co diffusion from the cap into a Ru liner (resulting in Co depletion at the top of Cu lines) is one of the root causes of EM degradation. A novel Co-doped Ru liner has been developed, which demonstrates a significant EM performance boost by addressing the Co diffusion issue. This Co-doped Ru liner is shown to be a promising liner of choice for Cu interconnects in advanced nodes.
先进节点中采用ru基衬垫和Co帽的Cu互连的EM性能改进:(特邀)
在使用Ru衬垫和Co衬垫的情况下,无空隙的Cu填充、Cu/衬垫(沟槽侧壁和底部)和Cu/衬垫(沟槽顶部)的界面控制以及晶粒尺寸工程对于提高Cu互连的电迁移(EM)性能至关重要。特别是Co从帽向Ru衬垫扩散(导致Cu线顶部Co耗尽)是导致EM退化的根本原因之一。一种新型共掺杂Ru衬里,通过解决Co扩散问题,显着提高了EM性能。这种共掺杂Ru衬里被证明是一种有前途的衬里选择在先进节点的铜互连。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信