Analytic models for crossbar read operation

Abstract

Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.