Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457139

R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry

引用次数: 2

Abstract

Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm²) and PREM (22.0 vs. 16.5 μV/cm²) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

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蓝宝石上硅衬底上溅射锆钛酸铅薄膜的沉积

用于射频MEMS应用的溅射Pb(Zr52Ti48)O3 (PZT)薄膜生长在150毫米的蓝宝石上硅(SOS)衬底上。薄膜性能与沉积在150mm Si/SiO2晶圆上的类似薄膜进行了比较。在SOS上沉积的PZT薄膜的PMAX (46.2 vs. 42.1 μV/cm2)和PREM (22.0 vs. 16.5 μV/cm2)均优于Si上沉积的薄膜。还注意到最大ϵr从1027 (Si)减少到927 (SOS)。晶体结构采用x射线衍射检测，铁电P-E迟滞曲线、介电常数调谐和损耗切线采用自制电容器结构研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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