{"title":"Multi-Probe Characterization of Ferroelectric/Dielectric Interface by C-V, P-V and Conductance Methods","authors":"Junkang Li, Y. Qu, M. Si, X. Lyu, P. Ye","doi":"10.1109/VLSITechnology18217.2020.9265069","DOIUrl":null,"url":null,"abstract":"In this work, we report on the multi-probe characterization of interfacial charges at the ferroelectric/dielectric (FE/DE) interface in response to both large-signal measurement associated with polarization switching and small-signal measurement without polarization switching. Charge densities at the FE/DE interface are extracted from temperature dependent C-V, P-V, conductance methods. It is found that the charge injection and accumulation at the FE/DE interface play a key role in the operation of FE/DE stack. These enormous trapped charges of 1013-1014 cm-2 at the FE/DE interface are supplied from the leakage current through the ultrathin DE layer. The proposed multi-probe measurement techniques provide a comprehensive understanding of FE/DE stack. The demonstrated leakage-assist polarization switching provides the new insights on the understanding of negative-capacitance (NC) effect and ferroelectric device performance.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this work, we report on the multi-probe characterization of interfacial charges at the ferroelectric/dielectric (FE/DE) interface in response to both large-signal measurement associated with polarization switching and small-signal measurement without polarization switching. Charge densities at the FE/DE interface are extracted from temperature dependent C-V, P-V, conductance methods. It is found that the charge injection and accumulation at the FE/DE interface play a key role in the operation of FE/DE stack. These enormous trapped charges of 1013-1014 cm-2 at the FE/DE interface are supplied from the leakage current through the ultrathin DE layer. The proposed multi-probe measurement techniques provide a comprehensive understanding of FE/DE stack. The demonstrated leakage-assist polarization switching provides the new insights on the understanding of negative-capacitance (NC) effect and ferroelectric device performance.