Analysis of power losses in power MOSFET based stacked polyphase bridges converters

Lebing Jin, S. Norrga, O. Wallmark
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引用次数: 2

Abstract

The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.
基于功率MOSFET的堆叠多相桥式变换器的功率损耗分析
准确预测功率半导体损耗的能力对于转换器的设计至关重要,并且可以为热管理提供参考。本文基于堆叠式多相桥式变换器,采用简化而精确的损耗模型计算功率mosfet的功率损耗,并进行了实验验证。由于振铃损耗在功率mosfet的开关过程中是不可避免的,因此分析的重点是振铃损耗的计算。此外,本文还利用分析模型比较了硅MOSFET和氮化镓FET变换器的功率损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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