Electrical conductivity and Seebeck coefficient measurements of single nanowires by utilizing a microfabricated thermoelectric nanowire characterization platform

Z. Wang, S. Adhikari, M. Kroener, D. Kojda, R. Mitdank, S. F. Fischer, W. Toellner, K. Nielsch, P. Woias
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引用次数: 12

Abstract

We demonstrate the fabrication and improvements of our next generation Thermoelectric Nanowire Characterization Platform (TNCP) that is utilized to investigate the thermoelectric properties of individual nanowires to obtain the Seebeck coefficient S, electrical conductivity σ and thermal conductivity κ from the same test specimen. Only from these data, the so-called figure of merit ZT can be obtained for a single nanowire. In order to analyze the structural composition of single nanowires the TNCP has also to fulfill the purpose of a sample holder used in Transmission Electron Microscopy. Our second generation of TNCPs has been designed for these purposes. As before, individual nanowires are assembled on the TNCP by means of dielectrophoresis. After this assembly the nanowire is merely physically contacted to the electrodes on the TNCP. Contact generation is in first place done by an electron beam-induced deposition (EBID) process of Pt and measurements of S and σ are carried out on individual nanowires and presented here. As the EBID process is very complex and difficult to handle we have developed a novel method using a shadow mask process for the local evaporation of platinum to generate ohmic contact between the nanowire and the surrounding electrodes.
利用微加工热电纳米线表征平台测量单纳米线的电导率和塞贝克系数
我们展示了下一代热电纳米线表征平台(TNCP)的制造和改进,该平台用于研究单个纳米线的热电特性,从而从同一试样中获得塞贝克系数S,电导率σ和导热系数κ。只有从这些数据中,才能得到单根纳米线的所谓质量曲线ZT。为了分析单纳米线的结构组成,TNCP还必须满足在透射电子显微镜中使用的样品夹的目的。我们的第二代tncp就是为此目的而设计的。和以前一样,单个纳米线通过介质电泳的方式组装在TNCP上。组装后,纳米线仅与TNCP上的电极物理接触。接触产生首先是通过电子束诱导沉积(EBID)工艺完成的,S和σ的测量是在单个纳米线上进行的,并在这里给出。由于EBID工艺非常复杂且难以处理,我们开发了一种新的方法,使用阴影掩膜工艺使铂的局部蒸发在纳米线和周围电极之间产生欧姆接触。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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