High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 /spl mu/m SiGe:C BiCMOS technology

Abstract

We demonstrate high performance RF LDMOS transistors integrated into an advanced industrial 0.25 /spl mu/m BiCMOS process with only one additional mask level. These devices have minimum 0.25 /spl mu/m physical gate lengths, use the 5 nm standard gate oxide of the logic transistors, and show f/sub T/ and f/sub max/ values of up to 30 and 50 GHz, respectively. The breakdown voltages are between 26 V and 13 V depending on layout. The power-added efficiency (PAE) is 70% at 560 mW/2 GHz and 60% at 340 mW/5 GHz.