Hamzullah Khan, Muhammad Siyar, C. Park, Farhan Javaid, M. Umer, Woo-Min Jin, M. Saleem, A. Adnan
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引用次数: 0
Abstract
We report the potential of an SnSe2–rGO composite as a thermoelectric (TE) material and the effect of reduced graphene oxide (rGO) concentration on its TE properties. SnSe2–rGO composites were synthesized via a solvothermal route followed by sintering at 823 K in the presence of argon. The in-situ doping of rGO within the SnSe2 matrix was successfully achieved. The resultant composite showed a significant improvement in electrical conductivity, which displayed a peak value of 2479 S/m (pure SnSe2 = 750 S/m) at 300 K. This enhancement is due to the presence of rGO conductive sheets, which increased the carrier concentration of the overall structure. The investigation confirms that increasing the rGO concentration can improve the thermoelectric properties of bulk SnSe2, where the peak ZT of 0.18 at 750 K was achieved when 11.7% of rGO was added to the SnSe2 matrix.
期刊介绍:
The International Journal of Materials Research (IJMR) publishes original high quality experimental and theoretical papers and reviews on basic and applied research in the field of materials science and engineering, with focus on synthesis, processing, constitution, and properties of all classes of materials. Particular emphasis is placed on microstructural design, phase relations, computational thermodynamics, and kinetics at the nano to macro scale. Contributions may also focus on progress in advanced characterization techniques. All articles are subject to thorough, independent peer review.