Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory

Abstract

Investigated the relation between the density of Si-H/N-H bonds and the programming characteristics of scaled metal-oxide-nitride-oxide-semiconductor (MONOS) memory devices and developed an analytical model for programming characteristics of the MONOS devices having a variety of trap densities. The model was validated experimentally. We apply the model to a metal-oxide-nitride-semiconductor (MONS) memory device with trap-density modulation in the nitride layer. The result shows the MONS memory is programmed faster and at lower-voltage than the conventional MONOS memory device.