Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory
K. Nomoto, U. Fujiwara, H. Aozasa, T. Terano, T. Kobayashi
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引用次数: 3
Abstract
Investigated the relation between the density of Si-H/N-H bonds and the programming characteristics of scaled metal-oxide-nitride-oxide-semiconductor (MONOS) memory devices and developed an analytical model for programming characteristics of the MONOS devices having a variety of trap densities. The model was validated experimentally. We apply the model to a metal-oxide-nitride-semiconductor (MONS) memory device with trap-density modulation in the nitride layer. The result shows the MONS memory is programmed faster and at lower-voltage than the conventional MONOS memory device.