High-Q vertically-coupled microresonators built by wafer-bonding technique

K. Djordjev, S. Choi, S. Choi, P. Dapkus
{"title":"High-Q vertically-coupled microresonators built by wafer-bonding technique","authors":"K. Djordjev, S. Choi, S. Choi, P. Dapkus","doi":"10.1109/LEOS.2001.968896","DOIUrl":null,"url":null,"abstract":"Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"30 1","pages":"509-510 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.968896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.
基于晶圆键合技术的高q垂直耦合微谐振器
只提供摘要形式。我们展示了基于InP材料系统的高Q垂直耦合无源微盘谐振器,作为利用有源器件的第一步,并了解限制其性能的参数。选择垂直耦合是因为与横向几何结构相比,它具有两个主要优点,即:i)通过外延生长精确控制耦合系数;ii)波导和谐振器的材料组成可以独立优化和生长,这有利于有源微磁盘器件的设计- ON/OFF开关,调制器和微磁盘激光器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信