Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism

Abstract

In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.