Intercalated multi-layer graphene grown by CVD for LSI interconnects

D. Kondo, H. Nakano, Bo Zhou, I. Kubota, Kenjiro Hayashi, K. Yagi, M. Takahashi, Motonobu Sato, Shintaro Sato, N. Yokoyama
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引用次数: 9

Abstract

We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.
CVD生长用于大规模集成电路互连的嵌入多层石墨烯
我们制作了多层石墨烯(MLG)布线,并证明其电阻率与Cu相同,可靠性优于Cu。采用化学气相沉积(CVD)技术在外延Co薄膜上合成了MLG晶体,其质量和电学性能与石墨晶体相当。MLG进一步嵌入FeCl3,获得了低至9.1 μΩ cm的电阻率。我们的结果表明,插入式MLG在未来的大规模集成电路互连中是非常有前途的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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