Commercialization of MRAM – Historical and Future Perspective

S. Ikegawa, F. Mancoff, S. Aggarwal
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引用次数: 6

Abstract

From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.
MRAM的商业化——历史与未来展望
从数据中心到物联网边缘设备,数据处理需求和计算的发展推动了对磁阻随机存取存储器(MRAM)日益增长的需求,因为它具有非易失性、高速、耐用性强和系统节电能力。本文在回顾MRAM成功商业化的基础上,展望了MRAM产品的未来。为了扩大MRAM市场,与现有存储器竞争,讨论了三个方向:(1)更快的访问时间,(2)更长的持久周期,(3)更低的比特成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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