Determination of the nonlinear physical constants in a piezoelectric AlN film

D. Feld, D. Shim
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引用次数: 20

Abstract

Recent models vary widely as to the mechanism in the piezoelectric AlN film that gives rise to the measured 2nd and 3rd order nonlinear behavior in BAW resonators. As an example one model suggests that a strain dependence of the bulk modulus in a piezoelectric AlN film is responsible for both the 2nd and 3rd order response of BAW and FBAR resonators [Collado]. We call this model the "bulk-bulk" model since the bulk modulus depends on the strain in each order respectively. We find that this "bulk-bulk" model is not capable of modeling our measured second harmonic (H2), and intermodulation distortion (IMD3) data simultaneously. When the 2nd order coefficient is chosen to match the measured 2nd harmonic response, it generates an IMD3 response through a process of remixing at a frequency 2F1-F0 which is larger than our measured data by ∼45 dBs when two +24 dBm tones are applied. It appears the authors did not fully incorporate their chosen non-linearity into their model. As a result the "bulk-bulk" non-linear model of the AlN film must be abandoned in favor of a new model — a "general" nonlinear Mason model, in which a complete set of 2nd and 3rd order nonlinear mechanisms can be evaluated to see which are consistent with the data. Such a model is described in this work and in a companion paper. Using this model we show that a strain dependent piezoelectric coefficient must be employed to model the H2 behavior without modeling an IMD3 response that is much larger than what is measured. To fit the IMD3 data a 3rd order strain dependent bulk modulus must also be incorporated. The resulting model is a "piezo-bulk" model for suggesting that the piezo coefficient and the bulk modulus have a 2nd and 3rd order dependence on strain, respectively. We also show that another recent model [Ueda] is not suitable for evaluating the underlying nonlinear physics because it violates conservation of energy and does not allow for remixing.
压电AlN薄膜非线性物理常数的测定
关于压电AlN薄膜中引起BAW谐振器中测量到的二阶和三阶非线性行为的机制,最近的模型差异很大。例如,一个模型表明,压电AlN薄膜中体积模量的应变依赖性是造成BAW和FBAR谐振器二阶和三阶响应的原因[Collado]。我们称这个模型为“体积-体积”模型,因为体积模量分别取决于每一阶的应变。我们发现这种“体积-体积”模型不能同时模拟我们测量的二次谐波(H2)和互调失真(IMD3)数据。当选择二阶系数来匹配测量的二次谐波响应时,它通过在频率2F1-F0下的重混过程产生IMD3响应,当施加两个+24 dBm音调时,该响应比我们的测量数据大约45 db。似乎作者没有将他们选择的非线性完全纳入他们的模型中。因此,必须放弃AlN薄膜的“体积-体积”非线性模型,而采用一种新的模型——“一般”非线性Mason模型,在这种模型中,可以评估一套完整的二阶和三阶非线性机制,以确定哪些机制与数据一致。这种模型在本研究和另一篇论文中进行了描述。使用该模型,我们表明必须采用应变相关压电系数来模拟H2行为,而不需要模拟比测量值大得多的IMD3响应。为了拟合IMD3数据,还必须纳入三阶应变相关体模量。该模型是一个“压电-体积”模型,表明压电系数和体积模量分别与应变有二阶和三阶依赖关系。我们还表明,另一个最近的模型[Ueda]不适合评估潜在的非线性物理,因为它违反了能量守恒,不允许再混合。
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