A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Abstract

The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V/sub GS/<5 V, V/sub DS/<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V>