Structural and optical characterization of SILAR deposited CTS thin films for optoelectronic applications

P. Sapna, K. Preetha
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Abstract

Copper tin sulphide (CTS) thin films have been prepared at room temperature on soda lime glass substrate by successive ionic layer adsorption and reaction (SILAR) method. In this work, cationic solution bath contains copper chloride, tin chloride, triethanolamine and anionic bath contains thioacetamide as precursors. Two sets of samples were prepared with 40 and 60 deposition cycles, keeping dipping and rinsing time constant at 10 and 2 seconds respectively. The as- prepared films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, Scanning Electron Microscopy(SEM), Energy Dispersive analysis (EDS) and atomic force microscopy(AFM) analysis. The XRD showed that the film has a triclinic structure. The average crystallite size slightly increases from 21nm to 22.6 nm with increase in deposition cycles. The EDS analysis confirms the presence of Cu, Sn and S.AFM and SEM analysis reveals that the film has a compact structure without any visible cracks or pores. Both the samples have high absorbance in the visible region. The as-deposited CTS samples can be used as absorber layer for solar cell.Copper tin sulphide (CTS) thin films have been prepared at room temperature on soda lime glass substrate by successive ionic layer adsorption and reaction (SILAR) method. In this work, cationic solution bath contains copper chloride, tin chloride, triethanolamine and anionic bath contains thioacetamide as precursors. Two sets of samples were prepared with 40 and 60 deposition cycles, keeping dipping and rinsing time constant at 10 and 2 seconds respectively. The as- prepared films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, Scanning Electron Microscopy(SEM), Energy Dispersive analysis (EDS) and atomic force microscopy(AFM) analysis. The XRD showed that the film has a triclinic structure. The average crystallite size slightly increases from 21nm to 22.6 nm with increase in deposition cycles. The EDS analysis confirms the presence of Cu, Sn and S.AFM and SEM analysis reveals that the film has a compact structure without any visible cracks or pores. Both the samples have high abso...
SILAR沉积CTS光电子薄膜的结构和光学特性
采用连续离子层吸附反应(SILAR)法制备了室温下碱石灰玻璃基板上的硫化铜锡(CTS)薄膜。在本研究中,阳离子溶液浴中含有氯化铜、氯化锡、三乙醇胺,阴离子浴中含有硫乙酰胺作为前驱体。制备两组样品,分别进行40次和60次沉积循环,分别保持浸渍和冲洗时间恒定在10秒和2秒。采用x射线衍射(XRD)、紫外-可见-近红外光谱(UV-Vis-NIR)、扫描电镜(SEM)、能谱分析(EDS)和原子力显微镜(AFM)对制备的薄膜进行了表征。XRD分析表明,薄膜具有三斜结构。随着沉积周期的增加,平均晶粒尺寸从21nm略微增加到22.6 nm。EDS分析证实了Cu、Sn和s的存在,afm和SEM分析表明薄膜结构致密,没有明显的裂纹和孔隙。两种样品在可见光区都有很高的吸光度。所制备的CTS样品可作为太阳能电池的吸收层。采用连续离子层吸附反应(SILAR)法制备了室温下碱石灰玻璃基板上的硫化铜锡(CTS)薄膜。在本研究中,阳离子溶液浴中含有氯化铜、氯化锡、三乙醇胺,阴离子浴中含有硫乙酰胺作为前驱体。制备两组样品,分别进行40次和60次沉积循环,分别保持浸渍和冲洗时间恒定在10秒和2秒。采用x射线衍射(XRD)、紫外-可见-近红外光谱(UV-Vis-NIR)、扫描电镜(SEM)、能谱分析(EDS)和原子力显微镜(AFM)对制备的薄膜进行了表征。XRD分析表明,薄膜具有三斜结构。随着沉积周期的增加,平均晶粒尺寸从21nm略微增加到22.6 nm。EDS分析证实了Cu、Sn和s的存在,afm和SEM分析表明薄膜结构致密,没有明显的裂纹和孔隙。两种样品均具有较高的浓度。
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