Strong and efficient light emission in ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979459

A. Chin, C. Liang, C. Lin, C.C. Wu, J. Liu

引用次数: 4

Abstract

We have studied the electroluminescence of ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20 /spl Aring/ SiO/sub 2/ tunnel diode and 0.18 /spl mu/m MOSFET. Besides the small 3 V operation and low power consumption, good reliability is another merit for this device.

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ITO/Al/sub 2/O/sub 3/超晶格隧道二极管的强高效发光

我们研究了ITO/Al/sub 2/O/sub 3/超晶格隧道二极管在Si上的电致发光。发光强度和效率分别比20 /spl ing/ SiO/sub - 2/隧道二极管和0.18 /spl mu/m MOSFET大3个数量级。除了小的3v操作和低功耗，良好的可靠性是该设备的另一个优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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