PEM/OBIRCH in failure localization of flip-chip

Abstract

With the widespread use of the flip-chip devices in production, failure analysis of flip-chip is becoming more and more important. As the core of failure analysis, failure localization has encountered many difficulties because of the special construction and increasing complexity of flip-chip. Photon emission microscopy (PEM) and optical beam induced current change (OBIRCH) are widely used methods in failure localization of the integrated circuit, by combining PEM and OBIRCH complementarily, quick, effective and accurate localization can be obtained. In this paper, the basic construction of flip-chip and the principle of PEM and OBIRCH was introduced, application of PEM and OBIRCH in failure localization of flip-chip was also presented, thus provide an effective failure localization technique for failure analysis of flip-chip.